Using a many impurity Anderson model, we describe the interaction of localized N states with GaInAs conduction states. N dependent DOS and material gain reflect features from strong mixing with N pairs/clusters,suggesting its broadband tunability.
© 2009 The Optical Society
N. Vogiatzis and J. M. Rorison, "Lifetime Broadening in GaInNAs Material," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JThE43.
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