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Bright Photoluminescence from Non-Tapered InN Nanowires Grown on Si by Molecular Beam Epitaxy

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Abstract

We have achieved superior quality non-tapered InN nanowires on Si(111) by molecular beam epitaxy, which are free of dislocations and exhibit bright photoluminescence at room-temperature and significantly reduced spectral broadening (linewidth~18.5 meV at 77K).

© 2009 Optical Society of America

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