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Conferences > CLEO > 2009 > JTuD > JTuD22
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper JTuD22
  • •https://doi.org/10.1364/CLEO.2009.JTuD22

GaAs-based Transverse Junction Superluminescent Diode at 1.1um Wavelength Region

Shi-Hao Guol, Ming-Ge Chou, Jr-Hung Wang, Ying-Jay Yang, Chi-Kuang Sun, and Jin-Wei Shi

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Abstract

We report GaAs-based transverse-junction-superluminescent-diodes, characterized as transverse-carrier-flow spread in quantum wells horizontally instead of vertical well-by-well injection. These devices overcome the problem of non-uniform-carrier-distribution and operate at a bio-optical window of 1.1-μm wavelength regime.

© 2009 Optical Society of America

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