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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Joint CLEO Poster Session I (JTuD)

1.3µm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots

C. Y. Ngo, S. F. Yoon, W. K. Loke, Q Cao, D R. Lim, Vincent Wong, Y K. Sim, and S J. Chua

http://dx.doi.org/10.1364/CLEO.2009.JTuD28


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Abstract

Electroabsorption properties of 1.3μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.

© 2009 The Optical Society

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(250.7360) Optoelectronics : Waveguide modulators

Citation
C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, V. Wong, Y. K. Sim, and S. J. Chua, "1.3µm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JTuD28.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2009-JTuD28


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