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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Joint CLEO Poster Session I (JTuD)

1.3µm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots

C. Y. Ngo, S. F. Yoon, W. K. Loke, Q Cao, D R. Lim, Vincent Wong, Y K. Sim, and S J. Chua


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Electroabsorption properties of 1.3μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.

© 2009 The Optical Society

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(250.7360) Optoelectronics : Waveguide modulators

C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, V. Wong, Y. K. Sim, and S. J. Chua, "1.3µm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JTuD28.

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