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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Joint CLEO Poster Session I (JTuD)

Intradot Dynamics of InAs/GaAs Quantum Dot Based Electro-Absorbers

Tomasz Piwonski, Jaroslaw Pulka, Gillian Madden, John Houlihan, Guillaume Huyet, Evgeny Viktorov, Thomas Erneux, Paul Mandel, and T Ochalski

http://dx.doi.org/10.1364/CLEO.2009.JTuD29


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Abstract

The carrier relaxation dynamics of an InAs/GaAs QD absorber is studied using pump-probe measurements. Under reverse bias conditions, we reveal fundamental differences in intradot relaxation dynamics depending on the initial population of the energy states.

© 2009 The Optical Society

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(320.0320) Ultrafast optics : Ultrafast optics
(320.7100) Ultrafast optics : Ultrafast measurements
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Citation
T. Piwonski, J. Pulka, G. Madden, J. Houlihan, G. Huyet, E. Viktorov, T. Erneux, P. Mandel, and T. Ochalski, "Intradot Dynamics of InAs/GaAs Quantum Dot Based Electro-Absorbers," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JTuD29.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2009-JTuD29


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