A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm^2.
© 2009 The Optical Society
S. Palit, J. Kirch, L. Mawst, T. Kuech, and N. Jokerst, "Thin Film P-Ridge N-Stripe III-V Laser Broad Area Metal-Metal Bonded to Silicon," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JWA38.
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