Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibits enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA.
© 2009 The Optical Society
(220.0220) Optical design and fabrication : Optical design and fabrication
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
C. S. Yang, P. Yu, C. Chiu, C. H. Chang, and H. C. Kuo, "Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JWA77.
References are not available for this paper.