Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite Difference Time Domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.
© 2009 The Optical Society
(050.0050) Diffraction and gratings : Diffraction and gratings
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(050.5298) Diffraction and gratings : Photonic crystals
P. A. Shields, S. Lis, T. Lee, D. W. Allsopp, M. D. Charlton, M. E. Zoorob, and W. N. Wang, "Influence of Guided Mode Absorption on the Effectiveness of GaN-on-Sapphire Photonic Crystal Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JWA81.
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