Record fabrication temperature, 100<sup>o</sup>C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200<sup>o</sup>C (4.1% at 135<sup>o</sup>C).
© 2010 The Optical Society
C. Shen, J. Shieh, H. Kuo, J. Y. Huang, W. Yu, W. Huang, C. Wang, C. Hsu, Y. Lin, H. Chiu, B. Dai, and F. Yang, "Thin Film Silicon Solar Cell Fabricated at 100<sup>o</sup>C by High Density Plasma for Flexible Photovoltaic Application," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optical Society of America, 2010), paper CMAA1.
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