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Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 16-21, 2010
ISBN: 978-1-55752-889-6
Quantum Emitter Photonic Devices (CMFF)

InGaAs QW Nanopillar Light Emitting Diodes Monolithically Grown on a Si Substrate

Linus C. Chuang, Roger Chen, Forrest G. Sedgwick, Wai Son Ko, Kar Wei Ng, Thai-Truong D. Tran, and Connie Chang-Hasnain

http://dx.doi.org/10.1364/CLEO.2010.CMFF6


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Abstract

Room-temperature operation of InGaAs/GaAs QW nanopillar light emitting diodes grown on a (111) Si substrate by low temperature MOCVD (400C) and fabricated using conventional lithography and processing techniques are reported for the first time.

© 2010 The Optical Society

OCIS Codes
(160.0160) Materials : Materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(160.4236) Materials : Nanomaterials

Citation
L. C. Chuang, R. Chen, F. G. Sedgwick, W. S. Ko, K. W. Ng, T. D. Tran, and C. Chang-Hasnain, "InGaAs QW Nanopillar Light Emitting Diodes Monolithically Grown on a Si Substrate," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optical Society of America, 2010), paper CMFF6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2010-CMFF6


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