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Single Crystalline GaAs Nanoneedles Grown on 46% Lattice-Mismatched Sapphire with Bright Luminescence

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Abstract

Catalyst-free GaAs nanoneedles are grown on a c-plane sapphire substrate at 400°C using MOCVD. Despite of an extremely large lattice mismatch of 46%, the nanoneedles show single wurtzite-phase and bright room-temperature photoluminescence with narrow linewidths.

© 2010 Optical Society of America

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