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Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 16-21, 2010
ISBN: 978-1-55752-889-6
Joint CLEO/QELS Poster Session I (JTuD)

Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method

Chao-Hsun Wang, Ching-Hua Chiu, Chih-Chun Ke, Hao-Chung Kuo, Tien-Chang Lu, and Shing-Chung Wang

http://dx.doi.org/10.1364/CLEO.2010.JTuD31


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Abstract

Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.

© 2010 The Optical Society

OCIS Codes
(160.0160) Materials : Materials
(160.2100) Materials : Electro-optical materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
C. Wang, C. Chiu, C. Ke, H. Kuo, T. Lu, and S. Wang, "Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optical Society of America, 2010), paper JTuD31.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2010-JTuD31


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