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Conferences > CLEO > 2010 > JWA > JWA94

Optical spectroscopy of Bi containing semiconductors

A. Chernikov, S. Chatterjee, M. Koch, C. Bückers, S. W. Koch, S. Imhof, A. Thränhardt, Xianfeng Lu, S. R. Johnson, D. A. Beaton, and T. Tiedje

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Abstract

The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

© 2010 Optical Society of America

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