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Conference Paper
CLEO: Applications and Technology
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Joint Symposium on Semiconductor Ultraviolet LEDs and Lasers: Semiconductor Mid-UV LEDs and Lasers (JTuD)

High Power III-Nitride UV Emitters

Max Shatalov, Jinwei Yang, Yuri Bilenko, Michael Shur, and Remis Gaska  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2011.JTuD1


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Abstract

Increasing power and efficiency of UV semiconductor light sources enables great expansion of system applications. We review state-of-the-art III-Nitride LEDs and report on improved device designs and fabrication for achieving high power operation.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.4170) Optical devices : Multilayers
(230.6080) Optical devices : Sources

Citation
M. Shatalov, J. Yang, Y. Bilenko, M. Shur, and R. Gaska, "High Power III-Nitride UV Emitters," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JTuD1.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2011-JTuD1

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