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Conference Paper
CLEO: Applications and Technology
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Joint Symposium on Semiconductor Ultraviolet LEDs and Lasers: Semiconductor Mid-UV LEDs and Lasers (JTuD)

IQE and EQE of the nitride-based UV/DUV LEDs

Hiroshi Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, Motoaki Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2011.JTuD2


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Abstract

IQE, EQE and IE of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Citation
H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, "IQE and EQE of the nitride-based UV/DUV LEDs," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JTuD2.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2011-JTuD2


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