A novel method to introduce more than 0.6% biaxial tensile strain and achieve a 60meV direct band gap reduction in epitaxially grown germanium is demonstrated. Possible applications include high efficiency germanium lasers on silicon substrates.
© 2011 OSA
D. Nam, A. Roy, K. Huang, M. Brongersma, and K. Saraswat, "Strained Germanium Membrane using Thin Film Stressor for High Efficiency Laser," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JTuI85.
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