The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.
© 2011 OSA
Q. Dai, Q. Shan, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M. Kim, and Y. Park, "On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CWF3.
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