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Conference Paper
CLEO: Science and Innovations
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Toward More Efficient Visible LEDs (CWF)

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Mary H. Crawford, Daniel D. Koleske, Min-Ho Kim, and Yongjo Park  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_SI.2011.CWF3


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Abstract

The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

© 2011 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Citation
Q. Dai, Q. Shan, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M. Kim, and Y. Park, "On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CWF3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_SI-2011-CWF3


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