The fabrication and characterisation of LED structures made of Ge grown on Si is reported. An average power levels at 1.7 micron of 10 micro-Watt, many orders of magnitude larger than the nW previously reported.
© 2012 OSA
P. Velha, K. Gallacher, D. C. Dumas, M. Myronov, D. R. Leadley, and D. J. Paul, "Direct band-gap electroluminescence from strained n-doped germanium diode," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper CW1L.7.
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