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Optics InfoBase > Conference Papers > CLEO_SI > 2012 > CW1L > Page CW1L.7 © 2012 OSA

Conference Paper
CLEO: Science and Innovations
San Jose, California United States
May 6-11, 2012
ISBN: 978-1-55752-943-5
Novel Light-emitting Materials (CW1L)

Direct band-gap electroluminescence from strained n-doped germanium diode

Philippe Velha, Kevin Gallacher, Derek C. Dumas, Maksym Myronov, David R. Leadley, and Douglas J. Paul  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_SI.2012.CW1L.7


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Abstract

The fabrication and characterisation of LED structures made of Ge grown on Si is reported. An average power levels at 1.7 micron of 10 micro-Watt, many orders of magnitude larger than the nW previously reported.

© 2012 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

Citation
P. Velha, K. Gallacher, D. C. Dumas, M. Myronov, D. R. Leadley, and D. J. Paul, "Direct band-gap electroluminescence from strained n-doped germanium diode," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper CW1L.7.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_SI-2012-CW1L.7


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