We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.
© 2011 OSA
D. Turchinovich and M. C. Hoffmann, "Ultrafast THz Saturable Absorption in Doped Semiconductors," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JThB39.
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