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Conference Paper
CLEO: Applications and Technology
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Nonlinear and Quantum Science and Measurements Joint Poster Session (JThB)

Ultrafast THz Saturable Absorption in Doped Semiconductors

Dmitry Turchinovich and Matthias C. Hoffmann  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2011.JThB39


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Abstract

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.

© 2011 OSA

OCIS Codes
(320.5540) Ultrafast optics : Pulse shaping
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(300.6495) Spectroscopy : Spectroscopy, teraherz

Citation
D. Turchinovich and M. C. Hoffmann, "Ultrafast THz Saturable Absorption in Doped Semiconductors," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JThB39.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2011-JThB39


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