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Conference Paper
CLEO: Applications and Technology
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Towards Applications Joint Poster Session (JWA)

Below Bandgap Excitation of SnO<sub>2</sub> Nanowires: The Relaxation of Trap States

San-Hui Chi, Lena Mazeina, Sharka M. Prokes, Joshua D. Caldwell, Guy Beadie, Steve R. Flom, and James S. Shirk  »View Author Affiliations


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Carrier relaxation of SnO2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity-dependent and recovers uniformly with a biexponential relaxation route.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(160.4236) Materials : Nanomaterials
(310.6628) Thin films : Subwavelength structures, nanostructures

S. Chi, L. Mazeina, S. M. Prokes, J. D. Caldwell, G. Beadie, S. R. Flom, and J. S. Shirk, "Below Bandgap Excitation of SnO<sub>2</sub> Nanowires: The Relaxation of Trap States," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JWA71.

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