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Silicon-on-Insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm.

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Abstract

Four echelle-type spectrometers with heterogeneously integrated GaInAsSb photodetectors on a silicon-on-insulator chip is realized. The operating wavelengths stretch from 1500 to 2300 nm. A maximum channel crosstalk of −10 dB, dark current of −2.5 μA and responsivity of 0.61 A/W at 1530 nm and 0.7 A/W at 2200 nm were obtained.

© 2013 Optical Society of America

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Poster Presentation

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