The optical absorption @1064 nm in Ta2O5 and SiO2 thin films is affected with simultaneous illumination ranging from 266 to 780 nm. The effect is attributed to filling of trap states in the forbidden gap.
© 2013 OSA
A. Markosyan, R. Route, M. Fejer, D. Patel, and C. Menoni, "Spontaneous and induced optical absorption in ultra-low loss amorphous Ta2O5 and SiO2 dielectric thin films," in CLEO: 2013, OSA Technical Digest (online) (Optical Society of America, 2013), paper JW2A.54.
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