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Nanoparticle-Enhanced Tunnel Junctions for Reduced Free-Carrier Absorption in Mid-IR Lasers

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Abstract

We present tunnel junctions, employing buried semimetallic nanoparticles, to reduce intervalence-band absorption in mid-IR lasers. Proof-of-concept results demonstrate low-resistance tunnel junctions with low p-type dopant concentrations, suitable for integration into GaSb-based diode lasers.

© 2011 Optical Society of America

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