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Helically Propagating Modes in InGaAs Nanoneedle Lasers Grown on Poly-Silicon and Silicon Substrates

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Abstract

InGaAs nanoneedle lasers were grown on both polycrystalline-Si and (100)-Si substrates by low temperature (400 °C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes.

© 2011 Optical Society of America

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