High crystalline quality AlN and pseudomorphic AlGaN films were deposited by metalorganic chemical vapor deposition on single crystal AlN substrates for the fabrication of a 265 nm light emitting diode with estimated IQE above 40%.
© 2011 OSA
R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, B. Moody, R. Schlesser, R. Kirste, A. Hoffmann, and Z. Sitar, "265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CTuU2.
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