OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO_SI > 2011 > CTuU > Page CTuU2 © 2011 OSA

Conference Paper
CLEO: Science and Innovations
Baltimore, Maryland United States
May 1-6, 2011
ISBN: 978-1-55752-910-7
Ultraviolet LEDs: Science and Innovation (CTuU)

265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Ramon Collazo, Seiji Mita, Jinqiao Xie, Anthony Rice, James Tweedie, Rafael Dalmau, Baxter Moody, Raoul Schlesser, Ronny Kirste, Axel Hoffmann, and Zlatko Sitar  »View Author Affiliations


View Full Text Article

Acrobat PDF (448 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


High crystalline quality AlN and pseudomorphic AlGaN films were deposited by metalorganic chemical vapor deposition on single crystal AlN substrates for the fabrication of a 265 nm light emitting diode with estimated IQE above 40%.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(310.6845) Thin films : Thin film devices and applications

R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, B. Moody, R. Schlesser, R. Kirste, A. Hoffmann, and Z. Sitar, "265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CTuU2.

Sort:  Journal  |  Reset


References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited