We report on the growth, doping and optical and transport properties of p-type Al rich AlGaN layers optimized for DUV emitter structures. Benefits of using AlN epi-templates in DUV emitter structures will also be elaborated.
© 2011 OSA
R. Dahal, J. Li, A. Sedhain, B. Pantha, J. Lin, and H. Jiang, "Impurities and conductivity control in Al-rich AlGaN alloys," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CTuU7.
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