Carrier relaxation of SnO2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity-dependent and recovers uniformly with a biexponential relaxation route.
© 2011 OSA
S. Chi, L. Mazeina, S. M. Prokes, J. D. Caldwell, G. Beadie, S. R. Flom, and J. S. Shirk, "Below Bandgap Excitation of SnO<sub>2</sub> Nanowires: The Relaxation of Trap States," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JWA71.
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