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Polarization Enhanced Carrier Transport in a p-down n-GaN/i-InGaN/p-GaN Solar Cell Structure

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Abstract

Evidence of a strong electric field aiding carrier collection is observed in an n-GaN/i-InGaN/p-GaN inverted polarity solar cell structure, detected by pump-probe electroabsorption and THz spectroscopy.

© 2012 Optical Society of America

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