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Conferences > CLEO_SI > 2012 > CF3J > CF3J.7

Heterogeneous Integration of III-V on Si: overcoming the lattice-mismatch barrier via the 1D route

Jae Cheol Shin, Parsian Mohseni, Stephanie Tomasulo, Kyle Montgomery, Minjoo Lee, and Xiuling Li

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Abstract

We demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.

© 2012 Optical Society of America

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