we demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including solar cells will be presented.
© 2012 OSA
J. C. Shin, P. Mohseni, S. Tomasulo, K. Montgomery, M. Lee, and X. Li, "Heterogeneous Integration of III-V on Si: overcoming the lattice-mismatch barrier via the 1D route," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper CF3J.7.
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