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ZnCdSe/ZnCdMgSe Quantum Well Infrared Photodetector

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Abstract

We present the design, fabrication and characterization of a II–VI ZnCdSe/ZnCdMgSe quantum well infrared photodetector with a bound to quasi-bound transition centered at 8.7 μm. Absorption, photocurrent measurements yield results consistent with conventional III–V QWIPs.

© 2012 Optical Society of America

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