Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Direct band-gap electroluminescence from strained n-doped germanium diodes

Not Accessible

Your library or personal account may give you access

Abstract

The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 μm of 10 μW, many orders of magnitude larger than the nW previously reported. 3 individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6 μm on Si with applications for lab-on-a-chip and healthcare.

© 2012 Optical Society of America

PDF Article
More Like This
Direct Band Gap Tensile-Strained Germanium

Yijie Huo, Hai Lin, Yiwen Rong, Maria Makarova, Theodore I. Kamins, Jelena Vuckovic, and James S. Harris
CPDB7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Room-temperature Electroluminescence from Germanium-on-Insulator Edge-Emitting Waveguide Diodes

Bo-Rui Wu, Po-Lun Yeh, and Guo-En Chang
21p_C304_4 JSAP-Optica Joint Symposia (JSAP) 2022

Process-Induced Strain Bandgap Reduction in Germanium Nanostructures

Philippe Velha, Douglas J. Paul, Maksym Myronov, and David R. Leadley
CTh3D.1 CLEO: Science and Innovations (CLEO:S&I) 2012

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved