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Optics InfoBase > Conference Papers > CLEO_SI > 2012 > JW2A > Page JW2A.102 © 2012 OSA

Conference Paper
CLEO: Science and Innovations
San Jose, California United States
May 6-11, 2012
ISBN: 978-1-55752-943-5
Poster Session I (JW2A)

Femtosecond Semiconductor Laser Emitting High Average Power 175-GHz Pulse Train

Keith G. Wilcox, Adrian H. Quarterman, Vasileios Apostolopoulos, Oliver J. Morris, C. Robin Head, Andrew P. Turnbull, Harvey E. Beere, Ian Farrer, David A. Ritchie, and Anne C. Tropper  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_AT.2012.JW2A.102


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Abstract

We describe a SESAM-mode-locked surface-emitting quantum well laser producing 400-fs pulses, with repetition frequency 175 GHz corresponding to the 117th harmonic of the external laser cavity, and average power 300 mW.

© 2012 OSA

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7090) Lasers and laser optics : Ultrafast lasers

Citation
K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, O. J. Morris, C. R. Head, A. P. Turnbull, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, "Femtosecond Semiconductor Laser Emitting High Average Power 175-GHz Pulse Train," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper JW2A.102.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_SI-2012-JW2A.102


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