Despite a diffraction limited lateral resolution of 360 nm, we detected 20 nm by 110 nm defects in a patterned 22 nm node wafer using quantitative phase and amplitude images from epi-illumination diffraction phase microscopy
© 2013 OSA
(030.4280) Coherence and statistical optics : Noise in imaging systems
(120.4630) Instrumentation, measurement, and metrology : Optical inspection
(120.5050) Instrumentation, measurement, and metrology : Phase measurement
R. Zhou, G. Popescu, and L. L. Goddard, "Finding defects in a 22 nm node wafer with visible light," in CLEO: 2013, OSA Technical Digest (online) (Optical Society of America, 2013), paper AF2J.2.
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