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Conference Paper
CLEO: Science and Innovations
San Jose, California United States
June 9-14, 2013
ISBN: 978-1-55752-972-5
Applied Optical Measurements in Fabrication Processes and Products II (AF2J)

Finding defects in a 22 nm node wafer with visible light

Renjie Zhou, Gabriel Popescu, and Lynford L. Goddard  »View Author Affiliations


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Despite a diffraction limited lateral resolution of 360 nm, we detected 20 nm by 110 nm defects in a patterned 22 nm node wafer using quantitative phase and amplitude images from epi-illumination diffraction phase microscopy

© 2013 OSA

OCIS Codes
(030.4280) Coherence and statistical optics : Noise in imaging systems
(120.4630) Instrumentation, measurement, and metrology : Optical inspection
(120.5050) Instrumentation, measurement, and metrology : Phase measurement

R. Zhou, G. Popescu, and L. L. Goddard, "Finding defects in a 22 nm node wafer with visible light," in CLEO: 2013, OSA Technical Digest (online) (Optical Society of America, 2013), paper AF2J.2.

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