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Optics InfoBase > Conference Papers > CLEO_SI > 2013 > CM2K > Page CM2K.6 © 2013 OSA

Conference Paper
CLEO: Science and Innovations
San Jose, California United States
June 9-14, 2013
ISBN: 978-1-55752-972-5
Mid-infrared Semiconductor Lasers (CM2K)

Mid-Infrared Lasing in a Single Lead Sulfide Subwavelength Wire at 180 K

Fan Fan and Zhicheng Liu  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_SI.2013.CM2K.6


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Abstract

We report mid-infrared lasing around 3 μm from a single PbS subwavelength wire, with a cavity volume less than the wavelength cubed at 0.44 λ<sup>3</sup>. The maximal lasing temperature is 180 K under pulse operation.

© 2013 OSA

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.4236) Materials : Nanomaterials

Citation
F. Fan and Z. Liu, "Mid-Infrared Lasing in a Single Lead Sulfide Subwavelength Wire at 180 K," in CLEO: 2013, OSA Technical Digest (online) (Optical Society of America, 2013), paper CM2K.6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_SI-2013-CM2K.6

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