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Optics InfoBase > Conference Papers > CLEO_SI > 2013 > CTh1M > Page CTh1M.3 © 2013 OSA

Conference Paper
CLEO: Science and Innovations
San Jose, California United States
June 9-14, 2013
ISBN: 978-1-55752-972-5
Next Generation Photovoltaics (CTh1M)

III-V Compound Semiconductor Nanowire Solar Cells

Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai, and Katsuhiro Tomioka  »View Author Affiliations


http://dx.doi.org/10.1364/CLEO_SI.2013.CTh1M.3


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Abstract

Core-multi-shell InP/AlInP nanowire-array solar cells were fabricated using selective-area metal-organic vapor phase epitaxy. The wider-bandgap outer shell layer passivates InP nanowires effectively, increasing conversion efficiency to 6.35%.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(220.4241) Optical design and fabrication : Nanostructure fabrication

Citation
T. Fukui, M. Yoshimura, E. Nakai, and K. Tomioka, "III-V Compound Semiconductor Nanowire Solar Cells," in CLEO: 2013, OSA Technical Digest (online) (Optical Society of America, 2013), paper CTh1M.3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_SI-2013-CTh1M.3


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