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Depletion-mode polysilicon optical modulators in a bulk CMOS process

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Abstract

We demonstrate the first depletion-mode modulators in polysilicon bulk CMOS. They use a new, wiggler-mode microcavity for process compatibility with fully-etched silicon and lateral pn junctions. We show 4.2dB extinction and 60fJ energy/bit at 5Gbps.

© 2013 Optical Society of America

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