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Conferences > CLEO_SI > 2014 > SM4M > SM4M.1

Buried-Heterostructure L3 Nanocavity All-Optical Memory with 2.3-nW Power Consumption

Eiichi Kuramochi, Kengo Nozaki, Akihiko Shinya, Hideaki Taniyama, Koji Takeda, Tomonari Sato, Shinji Matsuo, and Masaya Notomi

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Abstract

A tuned L3 design with an enhanced Q factor and a small mode volume enabled 2.3-nW bias power for a buried-heterostructure InGaAsP/InP nanocavity optical memory that was 1/10 of the previous record (30 nW).

© 2014 Optical Society of America

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