High Power 20GHz Photodiodes with Microwave Tuning Circuits

Kejia Li; Qiugui Zhou; Xiaojun Xie; Andreas Beling; Joe C. Campbell

doi:10.1364/CLEO_SI.2014.STh4I.6

CLEO: 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper STh4I.6
•https://doi.org/10.1364/CLEO_SI.2014.STh4I.6

High Power 20GHz Photodiodes with Microwave Tuning Circuits

Kejia Li, Qiugui Zhou, Xiaojun Xie, Andreas Beling, and Joe C. Campbell

CLEO: Science and Innovations 2014

San Jose, California United States
8–13 June 2014
ISBN: 978-1-55752-999-2

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Novel Photodetectors (STh4I)

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K. Li, Q. Zhou, X. Xie, A. Beling, and J. C. Campbell, "High Power 20GHz Photodiodes with Microwave Tuning Circuits," in CLEO: 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper STh4I.6.

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Abstract

Modified uni-travelling-carrier (MUTC) photodiodes (PDs) with microwave open and shorted stubs having RF output power (P_{RF_out}) of 23 dBm and 21.6 dBm, respectively, at 20 GHz are demonstrated.

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