Add to BibSonomyAbstract
We report on a compact germanium photodiode design where single crystal germanium wraps around a single mode silicon waveguide. A 32 µm long, 626 aF, p-i-n device has 0.8 A/W responsivity at 1550 nm.
© 2014 Optical Society of America
PDF ArticleMore Like This
Silicon-Germanium p-i-n Photodetectors at Telecommunication Wavelengths Grown Directly on Silicon
Dyan Ali, Phillip Thompson, Julius Goldhar, Joseph DiPasquale, and Christopher J.K. Richardson
CMY3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
−1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector with Silicon Contacts
H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout
Tu2D.6 Optical Fiber Communication Conference (OFC) 2016
Germanium-tin on Silicon p-i-n Photodiode with Low Dark Current due to Sidewall Surface Passivation
Yuan Dong, Wei Wang, Dian Lei, Xiao Gong, Qian Zhou, Shuh Ying Lee, Wan Khai Loke, Soon-Fatt Yoon, Gengchiau Liang, and Yee-Chia Yeo
W2A.29 Optical Fiber Communication Conference (OFC) 2015