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Conferences > COSI > 2011 > CWA > CWA1

Model-based metrology of resist patterns in lithography

Arie den Boef, Hugo Cramer, Paul Hinnen, Henry Megens, Michael Kubis, Maurits van der Schaar, Kaustuve Bhatacharrya, and Noelle Wright

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Abstract

A model-based optical metrology concept is presented that can be used for measuring the shape and position of resist features in the production of Memory and Logic devices. A few application examples are presented that demonstrate the capabilities of this concept.

© 2011 Optical Society of America

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