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Optics InfoBase > Conference Papers > ECOC > 2011 > Tu.6.LeSaleve > Page Tu.6.LeSaleve.1 © 2011 OSA

Conference Paper
European Conference and Exposition on Optical Communications
Geneva Switzerland
September 18-22, 2011
ISBN: 978-1-55752-931-2
QUANTUM DOT AND QUANTUM WELL DEVICES (Tu.6.LeSaleve)

1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates with Current Injection across Direct-Bonded GaAs/Si Heterointerfaces

Katsuaki Tanabe, Katsuyuki Watanabe, Stephane Faure, and Yasuhiko Arakawa  »View Author Affiliations


http://dx.doi.org/10.1364/ECOC.2011.Tu.6.LeSaleve.1


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Abstract

A 1.3 μm InAs/GaAs quantum dot laser on a Si substrate is demonstrated by current injection through a direct-bonded GaAs/Si interface with a threshold current density of 205 A/cm2, the lowest among lasers on silicon.

© 2011 OSA

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers

Citation
K. Tanabe, K. Watanabe, S. Faure, and Y. Arakawa, "1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates with Current Injection across Direct-Bonded GaAs/Si Heterointerfaces," in 37th European Conference and Exposition on Optical Communications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper Tu.6.LeSaleve.1.
http://www.opticsinfobase.org/abstract.cfm?URI=ECOC-2011-Tu.6.LeSaleve.1


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