Abstract
The paper proposed a device with Al / Porous-Silicon / c-Si structures were fabricated and characterized. Experimental results showed that the short-wavelength responses in the developed devices were enhanced as compared to the silicon based homojunction transistors, this comparably medium optical gain indicated that the developed Porous-Silicon / c-Si heterojunction thin film photo-transistor got potential for practical applications The paper proposed a short-wavelength responses enhanced of the Si-based thin film phototransistors can be enhanced by introducing thin porous-layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Therefore, the more applications of short-wavelength are the trend for bio-medical-detection.
© 2014 Optical Society of America
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