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Laser breakdown of dielectric oxide films from 20 fs to 1 ps

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Abstract

Dielectric thin films based on oxides are common for optical coatings. We investigated five oxides (TiO2, Ta5O2, HfO2, Al2O3, and SiO2) with different bandgaps ranging from 3.2 eV to 8 eV. The films were deposited by ion-beam sputtering on fused silica substrates with a thickness of 6λ/4n where λ = 790 nm and n is the refractive index of the material. Single-pulse damage studies were performed with pulses from a Ti:sapphire oscillator-amplifier system and pulse durations from 25 fs to 1.2 ps.

© 2003 Optical Society of America

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