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Conferences > FiO > 2003 > ThM > ThM5

Optical, structural and electrical properties of amorphous SiGeB obtained by LF PECVD

A. Pérez, C. Zúñiga, A. Torres, and F. Renero

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Abstract

Results of characterization of amorphous silicon germanium borum deposited by low frequency plasma enhanced chemical vapor deposition are presented. The structure has been studied by IR and Raman spectrocopy. Transport of carriers has been studied by measurement conductivity dependence on temperature. The optical properties have been determined using Swanepoel’s method.

© 2003 Optical Society of America

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