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Optimization of Anisotropically Etched Silicon Surface-Relief Gratings for Substrate-Mode Optical Interconnects

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Abstract

A simulated annealing algorithm in conjunction with the rigorous coupled-wave analysis (RCWA) is applied to determine the optimum profiles of right-angle-face anisotropically etched silicon (Si) gratings. The sensitivities of the optimized profiles are presented.

© 2005 Optical Society of America

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