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Si-based resonant cavity enhanced photodetectors at 1.55μm

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Abstract

Silicon photodetectors have found wide acceptance for visible light applications, because of their near perfect efficiency at these wavelengths. In order to extend the detectable wavelength to 1.55 •m, the design of a RCE Si Schottky photodiode based on internal photoemission effect, is proposed.

© 2005 Optical Society of America

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