Field-effect transistors based on a regioregular poly(alkylthiophene) were studied for the effect of p-doped levels of the active layer. We found an appropriate doping range that improves field-effect mobility and on/off performance of the transistors.
© 2005 Optical Society of America
S. Hoshino, M. Yoshida, S. Uemura, T. Kodzasa, and T. Kamata, "Device Characteristics of p-Doped Regioregular Poly(alkylthiophene)-Based Field-Effect Transistors," in Frontiers in Optics, OSA Technical Digest Series (Optical Society of America, 2005), paper SSuB4.
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