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Conference Paper
Frontiers in Optics
Tucson, Arizona United States
October 16-21, 2005
ISBN: 1-55752-797-0
Organic Field Effect Transistors (OFETs) (SSuB)

Device Characteristics of p-Doped Regioregular Poly(alkylthiophene)-Based Field-Effect Transistors

Satoshi Hoshino, Manabu Yoshida, Sei Uemura, Takehito Kodzasa, and Toshihide Kamata

http://dx.doi.org/10.1364/FIO.2005.SSuB4


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Abstract

Field-effect transistors based on a regioregular poly(alkylthiophene) were studied for the effect of p-doped levels of the active layer. We found an appropriate doping range that improves field-effect mobility and on/off performance of the transistors.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.4890) Materials : Organic materials
(160.5470) Materials : Polymers

Citation
S. Hoshino, M. Yoshida, S. Uemura, T. Kodzasa, and T. Kamata, "Device Characteristics of p-Doped Regioregular Poly(alkylthiophene)-Based Field-Effect Transistors," in Frontiers in Optics, OSA Technical Digest Series (Optical Society of America, 2005), paper SSuB4.
http://www.opticsinfobase.org/abstract.cfm?URI=FiO-2005-SSuB4


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