Nanophotonic integration of III-V on silicon based on top-down coupling is presented. Light can be coupled up for amplification/absorption or coupled down for passive processing. Interlayer wafer bonding for this integration is described.
© 2009 OSA
(230.0230) Optical devices : Optical devices
(230.3120) Optical devices : Integrated optics devices
(250.0250) Optoelectronics : Optoelectronics
(250.5300) Optoelectronics : Photonic integrated circuits
Y. Wang, Q. Wang, C. Liu, N. Doris, Y. Wei, Y. Huang, and S. Ho, "Electronic-Nanophotonic Integration," in Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, OSA Technical Digest (CD) (Optical Society of America, 2009), paper FWN2.
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