Sub-micron waveguide fabrication in AlN-GaN-AlN is demonstrated. Improvement to sidewall verticality and reduced nanorod defects through optimized etching parameters are highlighted. Dice-and-cleave approach is adopted to achieve good end-facets.
© 2011 OSA
V. Krishnamurthy, Y. Chen, Y. Lai, and S. T. Ho, "Fabrication of AlN-GaN-AlN sub-micron waveguide with cleaved facets," in Frontiers in Optics 2011/Laser Science XXVII, OSA Technical Digest (Optical Society of America, 2011), paper FThO2.
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