We show that by using a SAM-APD topology, the required bias voltage for a given current can be reduced by 27% through earlier onset of avalanche gain.
© 2012 OSA
B. Souhan, R. R. Grote, J. B. Driscoll, and R. M. Osgood, "Ion-Implanted Silicon-Waveguide Avalanche Photodiode with Separate Absorption-Multiplication Region for C-band Operation," in Frontiers in Optics 2012/Laser Science XXVIII, OSA Technical Digest (online) (Optical Society of America, 2012), paper FTu2A.5.
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