OSA's Digital Library

Optics InfoBase > Conference Papers > FiO > 2012 > FTu2A > Page FTu2A.5 © 2012 OSA

Conference Paper
Frontiers in Optics
Rochester, New York United States
October 14-18, 2012
ISBN: 978-1-55752-956-5
CMOS Compatible Silicon Photonics (FTu2A)

Ion-Implanted Silicon-Waveguide Avalanche Photodiode with Separate Absorption-Multiplication Region for C-band Operation

Brian Souhan, Richard R. Grote, Jeffrey B. Driscoll, and Richard M. Osgood  »View Author Affiliations


http://dx.doi.org/10.1364/FIO.2012.FTu2A.5


View Full Text Article

Acrobat PDF (141 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

We show that by using a SAM-APD topology, the required bias voltage for a given current can be reduced by 27% through earlier onset of avalanche gain.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(040.1345) Detectors : Avalanche photodiodes (APDs)

Citation
B. Souhan, R. R. Grote, J. B. Driscoll, and R. M. Osgood, "Ion-Implanted Silicon-Waveguide Avalanche Photodiode with Separate Absorption-Multiplication Region for C-band Operation," in Frontiers in Optics 2012/Laser Science XXVIII, OSA Technical Digest (online) (Optical Society of America, 2012), paper FTu2A.5.
http://www.opticsinfobase.org/abstract.cfm?URI=FiO-2012-FTu2A.5


Sort:  Journal  |  Reset

References

References are not available for this paper.


Presentation Video



OSA is a member of CrossRef.

CrossCheck Deposited